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S T F 8220
S amHop Microelectronics C orp. Oct.23 2006 ver1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
7A
R DS (ON)
20 28
S uper high dense cell design for low R DS (ON).
@ V G S = 4.0V @ V G S = 2.5V
S2 S2 S2 G2
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
Bottom Drain Contact
S1 S1 S1
4
Q1
5 6 7
Q2 Bottom Drain Contact
S2 S2 S2 G2
P IN 1
S1 S1 S1 G1
D1/D2
3 2 1
DF N 2X3 (B ottom view)
G1
8
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ TJ=25 C -P ulsed
b
S ymbol VDS VGS ID IDM IS PD TJ, TS TG
Limit 20 12 7 30 1.7 1.56 -55 to 150
Unit V V A A A W C
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 80 C /W
1
S T F 8220
E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) gFS CISS COSS CRSS
c
S ymbol
Condition
VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 12V,VDS = 0V VDS = VGS, ID = 250uA VGS = 4.0V, ID = 7A VGS =2.5V, ID = 4A VDS = 5V, ID =4A
Min Typ C Max Unit
20 1 10 0.5 0.8 17.5 21 12 670 188 140 1.5 20 28 V uA uA V
m ohm m ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance
S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =10V, VGS = 0V f =1.0MHZ
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = 10V, ID = 1A, VGEN = 4.0V, R GE N= 6 ohm
15 32 50 30 10
ns ns ns ns nC nC nC
VDS =10V, ID = 4A, VGS =4.0V
1.4 4.2
2
S T F 8220
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0 V, Is = 1.7A
Min Typ Max Unit
0.8 1.2 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
20 V G S =4V
V G S =2.5V
15
16
12 V G S =2V
ID, Drain C urrent(A)
12 V G S =1.5V 8 4 0
ID, Drain C urrent (A)
9 6 -55 C 3 0 T j=125 C 0 0.5 1.0 25 C 1.5 2.0 2.5 3.0
0
0.5
1
1.5
2
2.5
3
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
60 50
F igure 2. Trans fer C haracteris tics
1.8
R DS (ON), On-R es is tance Normalized
1.6 1.4
V G S =4V ID=6A V G S =2.5V ID=4A
R DS (on) (m W)
40 30 20 V G S =4V 10 0
V G S =2.5V
1.2
1.0 0.8
1
4
8
12
16
20
0
25
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
S T F 8220
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
60
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=4A
Is , S ource-drain current (A)
50
15.0 10.0 5.0
R DS (on) (m W)
40 125 C 30 75 C 20 10 0 25 C
75 C
125 C 25 C
0
2
4
6
8
10
1.0 0
0.3
0.6
0.9
1.2
1.5
V G S , G ate-S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T F 8220
900 C is s 750
V G S , G ate to S ource V oltage (V )
5 4 3 2 1 0 VDS =10V ID=4A
C , C apacitance (pF )
600 C os s 450 300 C rs s 150 0
6
2
4
6
8
10
12
0
2
4
6
8
10
12
14 16
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
600
S witching T ime (ns ) ID, Drain C urrent (A)
80 10
R
DS
100 60 10
T D (o ff) Tr Tf T D (on)
(O
N)
L im
it
10 ms
10
0m
1
DC
s
1s
1 1
V DS =10V ,ID=1A VGS= 4 V
0.1 0.03
VGS =4V S ingle P ulse T A=25 C 0.1 1 10 30 50
6 10
60 100 300 600
R g, G ate R es is tance (W)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
1
F igure 12. Maximum S afe O perating Area
Normalized Transient
Thermal Resistance
D = 0.5
0.2
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE
P(pk)
RJA (t ) = ( r t) * RJA RJA =80 C/W
t1 t2 TJ - TA = P * R JA (t) Duty Cycle , D = t1 / t2
0.01 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 13.
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
STF8220
PACKAGE OUTLINE DIMENSIONS DFN
E L
D
K
H F C
A
B
A1
D E H L B C F
0.80 0.00 2.95 1.95 0.30 1.45 1.65 0.195 0.18 0.22
1.00 0.025 3.05 2.05 0.45 1.55 1.75 0.211 0.28 0.32
0.031 0.00 0.116 0.077 0.014 0.057 0.065 0.0076 0.007 0.008
0.039 0.001 0.120 0.081 0.018 0.061 0.069 0.008 0.011 0.126
6
S T F 8220
DFN Tape and Reel Data
7

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